High-performance polycrystalline silicon thin-film transistor with multiple nanowire channels and lightly doped drain structure

نویسندگان

  • Yung-Chun Wu
  • Ting-Chang Chang
  • Chun-Yen Chang
  • Chi-Shen Chen
  • Chun-Hao Tu
  • Po-Tsun Liu
چکیده

Related Articles Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors Appl. Phys. Lett. 101, 243501 (2012) Reduced graphene oxide based flexible organic charge trap memory devices Appl. Phys. Lett. 101, 233308 (2012) Analyzing threshold pressure limitations in microfluidic transistors for self-regulated microfluidic circuits Appl. Phys. Lett. 101, 234107 (2012) Reduced graphene oxide based flexible organic charge trap memory devices APL: Org. Electron. Photonics 5, 265 (2012) Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxidesemiconductor field-effect transistors Appl. Phys. Lett. 101, 233509 (2012)

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

متن کامل

A novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

متن کامل

The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.08.009 ⇑ Corresponding author. Tel.: +82 31 290 7139; fax E-mail address: [email protected] (J. Yi). Low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have a high carrier mobility that enables the design of small devices that offer large currents and fast switching speeds. However, the elec...

متن کامل

Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors

Articles you may be interested in Anomalous hot-carrier-induced degradation of offset gated polycrystalline silicon thin-film transistors Appl. Reliability of laser-activated low-temperature polycrystalline silicon thin-film transistors Appl. Erratum: " Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors " [J. Effect of ...

متن کامل

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012